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savantic semiconductor product specification silicon pnp power transistors 2SA1303 d escription with to-3pn package complement to type 2sc3284 applications audio and general purpose pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -14 a i b base current -3 a p c collector power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1303 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -150 v v cesat collector-emitter saturation voltage i c =-5a ;i b =-0.5a -2.0 v i cbo collector cut-off current v cb =-150v ;i e =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe dc current gain i c =-5a ; v ce =-4v 50 180 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 400 pf f t transition frequency i c =-2a ; v ce =-12v 50 mhz switching times t on turn on time 0.25 s t s storage time 0.85 s t f fall time i c =-5a;r l =12 ? i b1 =-i b2 =-0.5a v cc =-60v 0.20 s h fe classifications o p y 50-100 70-140 90-180
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1303 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1303

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